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2N3878 датащи(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2N3878 датащи(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistor 2N3878 DESCRIPTION · Excellent Safe Operating Area · Low Collector-Emitter Saturation Voltage · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS · Designed for high speed switching and linear- amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 5 ℃ /W SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 4 A PC Collector Power Dissipation@TC=25℃ 35 W TJ Junction Temperature -65~200 ℃ Tstg Storage Temperature -65~200 ℃ |
Аналогичный номер детали - 2N3878 |
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Аналогичное описание - 2N3878 |
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