P89LPC930FDH datasheet(38/55 Pages) PHILIPS

38 / 55 page

Philips Semiconductors

P89LPC930/931

8-bit microcontrollers with two-clock 80C51 core

Product data

Rev. 05 — 15 December 2004

38 of 55

9397 750 14472

8.24 Flash program memory

8.24.1

General description

The P89LPC930/931 Flash memory provides in-circuit electrical erasure and

programming. The Flash can be read, erased, or written as bytes. The Sector and

Page Erase functions can erase any Flash sector (1 kB) or page (64 bytes). The Chip

Erase operation will erase the entire program memory. In-System Programming and

standard parallel programming are both available. On-chip erase and write timing

generation contribute to a user-friendly programming interface. The P89LPC930/931

Flash reliably stores memory contents even after more than 100,000 erase and

program cycles. The cell is designed to optimize the erase and programming

mechanisms. The P89LPC930/931 uses VDD as the supply voltage to perform the

Program/Erase algorithms.

8.24.2

Features

• Byte-erase allowing code memory to be used for data storage.

• Internal ﬁxed boot ROM, containing low-level In-Application Programming (IAP)

routines.

• User programs can call these routines to perform In-Application Programming

(IAP).

• Default loader providing In-System Programming via the serial port, located in

upper end of user program memory.

• Boot vector allows user-provided Flash loader code to reside anywhere in the

Flash memory space, providing ﬂexibility to the user.

• Programming and erase over the full operating voltage range.

• Programming/Erase using ISP/IAP.

• Any ﬂash program/erase operation in 2 ms.

• Parallel programming with industry-standard commercial programmers.

• Programmable security for the code in the Flash for each sector.

• More than 100,000 typical erase/program cycles for each byte.

• 10 year minimum data retention.

8.24.3

Using Flash as data storage

The Flash code memory array of this device supports individual byte erasing and

programming. Any byte in the code memory array may be read using the MOVC

instruction, provided that the sector containing the byte has not been secured (a

MOVC instruction is not allowed to read code memory contents of a secured sector).

Thus any byte in a non-secured sector may be used for non-volatile data storage.

8.24.4

ISP and IAP capabilities of the P89LPC930/931

Flash organization: The P89LPC930/931 program memory consists of eight 1 KB

sectors. Each sector can be further divided into 64-byte pages. In addition to sector

erase and page erase, a 64-byte page register is included which allows from 1 to 64

bytes of a given page to be programmed at the same time, substantially reducing

overall programming time. An In-Application Programming (IAP) interface is provided

to allow the end user’s application to erase and reprogram the user code memory. In

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