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2SD1509 датащи(PDF) 1 Page - Inchange Semiconductor Company Limited

номер детали 2SD1509
подробное описание детали  isc Silicon NPN Darlington Power Transistor
PDF  2 Pages
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производитель  ISC [Inchange Semiconductor Company Limited]
домашняя страница  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SD1509 датащи(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
1
isc website： www.iscsemi.com
isc & iscsemi is registered trademark
isc Silicon NPN Darlington Power Transistor
2SD1509
DESCRIPTION
·
High DC Current Gain-
: hFE = 2000(Min)@ IC= 1A
·
Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 80V(Min)
·
Low Collector-Emitter Saturation Voltage-
: VCE(sat) = 1.5V(Max)@ IC=1A
APPLICATIONS
·
Designed for general purpose amplifier and low speed
switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
80
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
8
V
IC
Collector Current-Continuous
2
A
ICM
Collector Current-Peak
4
A
IB
Base Current
0.5
A
PC
Collector Power Dissipation
TC=25℃
10
W
Collector Power Dissipation
Ta=25℃
1.5
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
2.5
℃
/W
Rth j-a
Thermal Resistance,Junction to Ambient
62.5
℃
/W


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