BUL128DB datasheet(2/2 Pages) ISC

номер детали	BUL128DB

подробное описание детали	isc Silicon NPN Power Transistor

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производитель	ISC [Inchange Semiconductor Company Limited]

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INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.com

isc & iscsemi is registered trademark

isc Silicon NPN Power Transistor

BUL128DB

ELECTRICAL CHARACTERISTICS

TC =25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage IC= 50mA; Ib=0

400

VCE(sat)-1

Collector-Emitter Saturation Voltage

IC= 0.5A; IB= 0.1A

0.7

VCE(sat)-2

Collector-Emitter Saturation Voltage

IC= 1A; IB= 0.2A

1.0

VCE(sat)-3

Collector-Emitter Saturation Voltage

IC= 2.5A; IB= 0.5A

1.5

VCE(sat)-4

Collector-Emitter Saturation Voltage

IC= 4A; IB= 1A

0.5

VBE(sat)-1

Base-Emitter Saturation Voltage

IC= 0.5A; IB= 0.1A

1.1

VBE(sat)-2

Base-Emitter Saturation Voltage

IC= 1A; IB= 0.2A

1.2

VBE(sat)-3

Base-Emitter Saturation Voltage

IC= 2.5A; IB= 0.5A

1.3

ICES

Collector Cutoff Current

VCE= 700V; VBE= -1.5V

VCE= 700V; VBE= -1.5V,TC= 125℃

0.1

0.5

ICEO

Collector Cutoff Current

VCE= 400V; IB= 0

0.25

hFE-1

DC Current Gain

IC= 10mA; VCE= 5V

hFE-2

DC Current Gain

IC= 2A; VCE= 5V

Diode Forward Voltage

IF= 2A

2.5

Switching Times, Resistive Load

Storage Time

IC= 2A; VCC= 250V;

IB1= -IB2= 0.4A; tp= 30μs

2.9

Fall Time

0.2

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