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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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BDY26C датащи(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BDY26C датащи(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page  INCHANGE Semiconductor isc Product Specification 2 isc website：www.iscsemi.com isc & iscsemi is registered trademark isc Silicon NPN Power Transistors BDY26C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 180 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 300 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.25A 0.6 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.25A 1.2 V ICES Collector Cutoff Current VCE= 250V; VBE= 0 1.0 mA ICEO Collector Cutoff Current VCE= 180V; IB= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 10V; IC= 0 1.0 mA hFE DC Current Gain IC= 2A; VCE= 4V 75 180 fT Current Gain-Bandwidth Product IC= 0.5A; VCE= 15V; f=10MHz 10 MHz Switching Times ton Turn-On Time IC= 5A; IB= 1A 1 μ s toff Turn-Off Time IC= 5A; IB1= 1A; IB2= -0.5A 6 μ s |
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