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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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BDX73 датащи(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BDX73 датащи(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistor BDX73 DESCRIPTION · Collector-Emitter Breakdown Voltage- : V(BR)CEO = 80V(Min) APPLICATIONS · Designed for use in power linear and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 10 A IB Base Current 5 A PC Collector Power Dissipation @ TC=25℃ 75 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.67 ℃ /W Rth j-a Thermal Resistance, Junction to Ambient 70 ℃ /W |
Аналогичный номер детали - BDX73 |
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Аналогичное описание - BDX73 |
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ссылки URL |
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