| поискавой системы для электроныых деталей |
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BDS12 датащи(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BDS12 датащи(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() NCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistor BDS12 DESCRIPTION · High Voltage: VCEV= 100V(Min) · Low Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 5A · High Reliablity APPLICATIONS · Designed for power linear and switching application and General puepose power. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEV Collector-Emitter Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A IB Base Current 5 A PC Collector Power Dissipation @ TC=25℃ 90 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.4 ℃ /W Rth j-a Thermal Resistance, Junction to Ambient 80 ℃ /W |
Аналогичный номер детали - BDS12 |
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Аналогичное описание - BDS12 |
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