ACS110-7SN/SB2

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0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

-40 -30 -20 -10

0

10

20

30

40

50

60

70

80

90 100 110 120 130

T (°C)

j

I& I

LH

I

, I , I [T ] / I

, I , I [T = 25°C]

GTHL

j

GTHL

j

Fig. 4: Relative variation of gate trigger current,

holding current and latching versus junction

temperature (typical values).

0

1

2

3

4

5

6

7

8

25

50

75

100

125

T (°C)

j

dV/dt [T ] / dV/dt [T = 125°C]

jj

Fig. 5: Relative variation of static dV/dt versus

junction temperature.

0

1

2

3

4

5

6

7

8

9

10

1

10

100

1000

Number of cycles

Non repetitive

T initial=25°C

j

Repetitive

T =105°C

ab

I

(A)

TSM

t=20ms

Fig. 8: Surge peak on-state current versus number

of cycles.

(dI/dt) [(dV/dt) ] / Specified (dI/dt)

cc

c

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

0

5

10

15

20

25

30

35

40

45

50

(dV/dt) (V/µs)

c

Fig. 6: Relative variation of critical rate of de-

crease of main current versus reapplied dV/dt

(typical values).

0.1

1.0

10.0

100.0

0.01

0.10

1.00

10.00

t (ms)

p

I²t

I

(A), I²t (A²s)

TSM

T initial=25°C

j

Fig. 9: Non repetitive surge peak on-state current

for a sinusoidal pulse with width tp < 10ms, and

corresponding value of I²t.

(dI/dt) [Tj] / (dI/dt) [T = 125°C]

cc

j

0

2

4

6

8

10

12

14

16

18

20

25

50

75

100

125

T (°C)

j

Fig. 7: Relative variation of critical rate of decrease

of main current versus junction temperature.