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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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MD1802FX датащи(PDF) 2 Page - Inchange Semiconductor Company Limited |
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MD1802FX датащи(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page  INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon NPN Power Transistor MD1802FX ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(sus) Collector-emitter sustaining Voltage IC= 10mA; IC= 0 700 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5.0A; IB=1.25A 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 5.0A; IB=1.25A 1.2 V ICBO Collector Cutoff Current VCB= 1500V ; IE= 0 0.2 mA IEBO Emitter Cutoff Current VEB= 9V ; IC= 0 1 mA hFE-1 DC Current Gain IC= 1A ; VCE= 5V 23 hFE-2 DC Current Gain IC= 5A ; VCE= 1V 5.5 hFE-3 DC Current Gain IC= 5A ; VCE= 5V 5.5 Switching times ts Inductive load Storage Time ICP= 4A , IB(on))= 0.5A ; fH= 16kHz VBE(Off)=-2.7V, LBB(OFF)=4.5uH 2.4 μ s tf Fall Time 0.2 μ s 1. Pulsed duration =300us,duty cycle ≤1.5% |
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