CJS6562 datasheet(1/4 Pages) ZPSEMI

номер детали	CJS6562

подробное описание детали	Plastic-Encapsulate Transistors

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TSSOP-8 Plastic-Encapsulate Transistors

CJS6562 N- and P-Channel 2.5-V(G-S) MOSFET

Equivalent circuit

Maximum ratings (Ta=25

℃ unless otherwise noted)

Parameter

Symbol

N-Channel

P-Channel

Unit

Drain-Source

Voltage

VDS

20

-20

Gate-Source Voltage

VGS

±12

V

Ta=25

℃

4.5

-3.5

Continuous Drain Current (TJ=150

℃)

a

Ta=70

℃

ID

3.6

-2.7

Pulsed Drain Current

IDM

30

-30

Continuous Source Current(Diode Conduction)

a

IS

1.25

-1.25

A

Ta=25

℃

1.0

Power Dissipation

a

Ta=70

℃

PD

0.64

W

Maximum Junction-to-Ambient

a

RthJA

125

℃/W

Operating Junction and

Storage Temperature

TJ, Tstg

-55 ~150

℃

Notes :

a. Surface Mounted on FR4 board, t≤10

S

TSSOP-8

1 of 4

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