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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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MJE13005F датащи(PDF) 1 Page - Inchange Semiconductor Company Limited |
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MJE13005F датащи(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistor MJE13005F DESCRIPTION · Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) · Collector Saturation Voltage : VCE(sat) = 0.6(Max) @ IC= 2.0A · Switching Time : tf= 0.9μs(Max.)@ IC= 2.0A APPLICATIONS · Designed for use in high-voltage, high-speed, power swit- ching in inductive circuit, they are particularly suited for 115 and 220V switchmode applications such as switching regulators,inverters,Motor controls,Solenoid/Relay drivers and deflection circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 4 A ICM Collector Current-peak 8 A IB Base Current 2 A IBM Base Current-Peak 4 A IE Emitter Current 6 A IEM Emitter Current-Peak 12 A PC Collector Power Dissipation Ta=25℃ 2 W Collector Power Dissipation TC=25℃ 75 Ti Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.67 ℃ /W Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃ /W |
Аналогичный номер детали - MJE13005F |
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Аналогичное описание - MJE13005F |
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