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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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MJE13005D датащи(PDF) 2 Page - Inchange Semiconductor Company Limited |
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MJE13005D датащи(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page  INCHANGE Semiconductor Product Specification isc website：www.iscsemi.com isc & iscsemi is registered trademark 2 Silicon NPN Power Transistor MJE13005D ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ;IB= 0 400 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ;IC= 0 9 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.5A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.5A 1.5 V ICBO Collector Cutoff Current VCB= 700V; IE= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 9V; IC= 0 0.1 mA hFE-1 DC Current Gain IC= 5mA ; VCE= 5V 10 hFE-2 DC Current Gain IC= 1A ; VCE= 5V 10 40 fT Current Gain-Bandwidth Product IC= 0.5A;VCE= 10V; ftest= 1MHz 7 MHz VECF C-E Diode Forward Voltage IF= 4A 2.0 V Switching Times ts Storage Time IC= 0. 25A 6.0 μ s tf Fall Time IC= 0. 5A 0.6 μ s |
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