IRFP250N datasheet(1/2 Pages) ISC

номер детали	IRFP250N

подробное описание детали	isc N-Channel MOSFET Transistor

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производитель	ISC [Inchange Semiconductor Company Limited]

домашняя страница	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.cn

isc & iscsemi is registered trademark

1

isc N-Channel MOSFET Transistor

IRFP250N

FEATURES

·

Drain Current ID= 30A@ TC=25℃

·

Drain Source Voltage-

: VDSS= 200V(Min)

·

Static Drain-Source On-Resistance

: RDS(on) = 0.075Ω(Max)

·

Fast Switching

DESCRIPTION

·

Designed for use in switch mode power supplies and general

purpose applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

VDSS

Drain-Source Voltage

200

V

VGS

Gate-Source Voltage-Continuous

±

20

V

ID

Drain Current-Continuous

30

A

IDM

Drain Current-Single Pluse

120

A

PD

Total Dissipation @TC=25℃

214

W

TJ

Max. Operating Junction Temperature

150

℃

Tstg

Storage Temperature

-55~150

℃

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance, Junction to Case

0.7

℃

/W

Rth j-a

Thermal Resistance, Junction to Ambient

40

℃

/W

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