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SC-89 датащи(PDF) 1 Page - Vishay Siliconix |
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SC-89 датащи(HTML) 1 Page - Vishay Siliconix |
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1 / 5 page ![]() Si1013R/X Vishay Siliconix New Product Document Number: 71167 S-02464—Rev. A, 25-Oct-00 www.vishay.com 1 P-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (mA) 1.2 @ VGS = –4.5 V –350 –20 1.6 @ VGS = –2.5 V –300 2.7 @ VGS = –1.8 V –150 FEATURES BENEFITS APPLICATIONS D High-Side Switching D Low On-Resistance: 1.2 W D Low Threshold: 0.8 V (typ) D Fast Swtiching Speed: 14 ns D 1.8-V Operation D Gate-Source ESD Protection D Ease in Driving Switches D Low Offset (Error) Voltage D Low-Voltage Operation D High-Speed Circuits D Low Battery Voltage Operation D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories D Battery Operated Systems D Power Supply Converter Circuits D Load/Power Switching Cell Phones, Pagers SC-75A or SC-89 Top View 2 1 S D G 3 Ordering Information: SC-75A (SOT– 416): Si1013R–Marking Code : D SC-89 (SOT– 490): Si1013X–Marking Code: B ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 secs Steady State Unit Drain-Source Voltage VDS –20 Gate-Source Voltage VGS "6 V _ TA = 25_C –400 –350 Continuous Drain Current (TJ = 150_C)b TA = 85_C ID –300 –275 Pulsed Drain Currenta IDM –1000 mA Continuous Source Current (diode conduction)b IS –275 –250 TA = 25_C 175 150 Maximum Power Dissipationb for SC-75 TA = 85_C 90 80 TA = 25_C PD 275 250 mW Maximum Power Dissipationb for SC-89 TA = 85_C 160 140 Operating Junction and Storage Temperature Range TJ, Tstg –55 to 150 _C Gate-Source ESD Rating (HBM, Method 3015) ESD 2000 V Notes a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR4 Board. |
Аналогичный номер детали - SC-89 |
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Аналогичное описание - SC-89 |
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