DN2450 datasheet(3/12 Pages) MICROCHIP

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 2015 Microchip Technology Inc.

DS20005404A-page 3

DN2450

1.0

ELECTRICAL CHARACTERISTICS

ABSOLUTE MAXIMUM RATINGS†

Drain-to-source voltage................................................................................................................................................................ BVDSX

Drain-to-gate voltage....................................................................................................................................................................BVDGX

Gate-to-source voltage................................................................................................................................................................... ±20V

Operating and storage temperature............................................................................................................................. -55°C to +150°C

Maximum junction temperature.....................................................................................................................................................150°C

1.1

ELECTRICAL SPECIFICATIONS

Note 1: All DC parameters are 100% tested at 25°C unless otherwise stated. Pulse test: 300 µs pulse, 2% duty cycle.

2: Specification is obtained by characterization and is not 100% tested.

† Notice: Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This is

a stress rating only and functional operation of the device at those or any other conditions above those indicated in the

operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods

may affect device reliability.

TABLE 1-1:

DC AND AC CHARACTERISTICS

Electrical Specifications: Unless otherwise specified, for all specifications TA =TJ = +25°C

Symbol

Parameter

Min

Typ

Max

Units Conditions

DC Parameters (Note 1, unless otherwise stated)

BVDSX

Drain-to-source breakdown voltage

500

–

VGS= -5.0V, ID= 100µA

VGS(OFF) Gate-to-source off voltage

-1.5

–

-3.5

VDS= 25V, ID= 10µA

∆VGS(OFF) Change in VGS(OFF) with temperature

–

-4.5

mV/°C VDS= 25V, ID= 10µA (Note 2)

IGSS

Gate body leakage

–

100

VGS= ±20V, VDS= 0V

ID(OFF)

Drain-to-source leakage current

––

1.0

µA

VDS= BVDSX, VGS= -10V

––

1.0

VDS= 0.8 BVDSX,

VGS= -10V, TA= 125°C (Note 2)

IDSS

Saturated drain-to-source current

700

–

VGS= 0V, VDS= 25V

RDS(ON)

Static drain-to-source on-state

resistance

–7.0

Ω

VGS= 0V, ID= 300mA

∆RDS(ON) Change in RDS(ON) with temperature

–

1.1

%/°C VGS= 0V, ID= 300mA (Note 2)

AC Parameters (Note 2)

GFS

Forward transconductance

500

–

mmho VDS= 10V, ID= 300mA

CISS

Input capacitance

–

150

200

VGS= -10V,

VDS= 25V,

f = 1MHz

COSS

Common source output capaci-

tance

–40

CRSS

Reverse transfer capacitance

–

td(ON)

Turn-on delay time

–

VDD= 25V,

ID= 300mA,

RGEN= 25Ω,

Rise time

–

td(OFF)

Turn-off delay time

–

Fall time

–

Diode Parameters

VSD

Diode forward voltage drop

–

1.8

VGS= -5.0V, ISD= 300mA (Note 1)

trr

Reverse recovery time

–

800

–

VGS= -5.0V, ISD= 300mA (Note 2)

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