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TS3USB3200

SCDS333B – JUNE 2012 – REVISED JULY 2016

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Copyright © 2012–2016, Texas Instruments Incorporated

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating

Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum.

(3)

All voltages are with respect to ground, unless otherwise specified.

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1) (2)

MIN

MAX

UNIT

–0.3

5.5

V

–0.5

5.5

V

Input/Output port diode current

–50

mA

Digital input voltage range (SEL1, SEL2, PSEL)

–0.3

5.5

V

–50

mA

100

mA

Continuous current through GND

–100

mA

Storage temperature

–65

150

°C

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.2 ESD Ratings

VALUE

UNIT

Electrostatic discharge

±3500

V

±1000

6.3 Recommended Operating Conditions

MIN

MAX

UNIT

Supply voltage

2.7

4.3

V

4.3

5.5

V

Analog voltage for USB and ID signal path

0

3.6

V

Analog voltage for MHL signal path

1.6

3.4

V

Digital input voltage (SEL1, SEL2, PSEL)

0

V

100

1000

μs/V

100

1000

μs/V

Operating free-air temperature

–40

85

ºC

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

(2)

The package thermal impedance is calculated in accordance with JESD 51-7.

6.4 Thermal Information

TS3USB3200

UNIT

RSV (UQFN)

16 PINS

109.1

°C/W

Junction-to-case (top) thermal resistance

36

°C/W

Junction-to-board thermal resistance

46.4

°C/W

Junction-to-top characterization parameter

1

°C/W

Junction-to-board characterization parameter

49.7

°C/W