Gate-Body Leakage Current

-

-

±100

nA

On Characteristics (Note 3)

Gate Threshold Voltage

-0.7

-1

-1.3

V

-

50

55

m

Ω

-

64

75

m

Ω

Drain-Source On-State Resistance

95

130

m

Ω

Forward Transconductance

-

10

-

S

Dynamic Characteristics (Note4)

Input Capacitance

-

950

-

PF

Output Capacitance

-

115

-

PF

Reverse Transfer Capacitance

F=1.0MHz

-

75

-

PF

Switching Characteristics (Note 4)

Turn-on Delay Time

-

7

-

nS

Turn-on Rise Time

-

3

-

nS

Turn-Off Delay Time

-

30

-

nS

Turn-Off Fall Time

-

12

-

nS

Total Gate Charge

-

9.5

-

nC

Gate-Source Charge

-

2

-

nC

Gate-Drain Charge

-

3

-

nC

Drain-Source Diode Characteristics

Diode Forward Voltage (Note 3)

-

-

-1.2

V

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on FR4 Board, t

≤ 10 sec.

3. Pulse Test: Pulse Width

≤ 300μs, Duty Cycle ≤ 2%.

4. Guaranteed by design, not subject to production

Electrical Characteristics (TA=25℃unless otherwise noted)

Parameter

Symbol

Condition

Min

Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

-30

-

V

Zero Gate Voltage Drain Current

-

-

-1

μA

MORE Semiconductor Company Limited

http://www.moresemi.com

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MSP3099