ACE93C46A/56A/66A

Three-wire Serial EEPROM

VER 1.3

1

Description

The ACE93C46A/56A/66A series are 1024/2048/4096 bits of serial Electrical Erasable and

Programmable Read Only Memory, commonly known as EEPROM. They are organized as

64/128/256 words of 16 bits each when the ORG pin is connected to VCC (or unconnected) and

128/256/512 words of 8 bits (1 byte) each when the ORG pin is tied to ground. The devices are

fabricated with proprietary advanced CMOS process for low power and low voltage applications.

These devices are available in standard 8-lead DIP, 8-lead JEDEC SOP, 8-lead TSSOP and 8-lead

DFN packages. Our extended VCC range (1.8V to 5.5V) devices enables wide spectrum of

applications.

The ACE93C46A/56A/66A is enabled through the Chip Select pin (CS), and accessed via a 3-wire

serial interface consisting of Data Input (DI), Data Output (DO), and Shift Clock (SCL). Upon receiving

a READ instruction at DI, the address is decoded and the data is clocked out serially on the data

output pin DO. The WRITE cycle is completely self-timed and no separate ERASE cycle is required

before WRITE. The WRITE cycle is only enabled when the part is in the ERASE/WRITE ENABLE

state. Once a device begins its self-timed program procedure, the data out pin (DO) can indicate the

READY/BUSY status by rising chip select (CS).

Features



Standard Voltage and Low Voltage Operation:

ACE 93C46A/56A/66A: VCC = 1.8V to 5.5V



User Selectable Internal Organization:

ACE 93C46A:128 x 8 or 64 x 16

ACE 93C56A:256 x 8 or 128 x 16

ACE 93C66A:512 x 8 or 256 x 16



2 MHz Clock Rate (5V) Compatibility.



Industry Standard 3-wire Serial Interface.



Self-Timed ERASE/WRITE Cycles (5ms max including auto-erase).



Automatic ERAL before WRAL.



Sequential READ Function.



High Reliability: Typical 1 Million Erase/Write Cycle Endurance.



100 Years Data Retention.



Industrial Temperature Range (-40o C to 85o C).



Standard 8-pin DIP/SOP/TSSOP/DFN Pb-free

Packages