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MBRF2035C датащи(PDF) 1 Page - Mospec Semiconductor

номер детали MBRF2035C
подробное описание детали  Full Plastic Dual Schottky Barrier Power Rectifiers
PDF  2 Pages
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производитель  MOSPEC [Mospec Semiconductor]
домашняя страница  http://www.mospec.com.tw
Logo MOSPEC - Mospec Semiconductor

MBRF2035C датащи(HTML) 1 Page - Mospec Semiconductor

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MOSPEC
MBRF2030C Thru MBRF2060C
Switchmode
Full Plastic Dual Schottky Barrier Power Rectifiers
Using the Schottky Barrier principle with a Molybdenum barrier metal.
These state-of-the-art geometry features epitaxial construction with oxide
passivation and metal overlay contact. Ideally suited for low voltage, high
frequency rectification, or as free wheeling and polarity protection diodes.
Features
Low Forward Voltage.
Low Switching noise.
High Current Capacity
Guarantee Reverse Avalanche.
Guard-Ring for Stress Protection.
Low Power Loss & High efficiency.
175℃ Operating Junction Temperature
Low Stored Charge Majority Carrier Conduction.
Plastic Material used Carries Underwriters Laboratory
Flammability Classification 94V-O
SCHOTTKY BARRIER
RECTIFIERS
20 AMPERES
MAXIMUM RATINGS
MBRF20
Characteristic
Symbol
30C
35C
40C
45C
50C
60C
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
30
35
40
45
50
60
V
RMS Reverse Voltage
VR(RMS)
21
25
28
32
35
42
V
Average Rectifier Forward Current (per diode)
Total Device (Rated VR), TC=100℃
IF(AV)
10
20
A
Peak Repetitive Forward Current
(Rate VR, Square Wave, 20kHz)
IFM
20
A
Non-Repetitive Peak Surge Current
(Surge applied at rate load conditions
halfware, single phase, 60Hz)
IFSM
150
A
Operating and Storage Junction
Temperature Range
TJ , Tstg
-65 to +175
30-60 VOLTS
ITO-220AB
MILLIMETERS
DIM
MIN
MAX
A
14.90
15.15
B
13.35
13.55
C
10.00
10.10
D
6.55
6.65
E
2.65
2.75
F
1.55
1.65
G
1.15
1.25
H
0.55
0.65
I
2.50
2.60
J
3.00
3.20
K
1.10
1.20
L
0.55
0.65
M
4.40
4.60
N
1.15
1.25
O
3.35
3.45
P
2.65
2.75
Q
3.15
3.25
R
3.60
3.80
THERMAL RESISTANCES
Typical Thermal Resistance junction to
case (per diode)
Rθ j-c
3.2
/w
ELECTRIAL CHARACTERISTICS
MBRF20
Characteristic
Symbol
30C
35C
40C
45C
50C
60C
Unit
Maximum Instantaneous Forward Voltage
( IF =10 Amp TC = 25℃) (per diode)
( IF =10 Amp TC = 125℃)
VF
0.75
0.66
0.80
0.72
V
Maximum Instantaneous Reverse Current
( Rated DC Voltage, TC = 25℃)
( Rated DC Voltage, TC = 125℃)
IR
0.01
20
mA


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