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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IRF7494 датащи(PDF) 2 Page - International Rectifier |
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IRF7494 датащи(HTML) 2 Page - International Rectifier |
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2 / 8 page  IRF7494 2 www.irf.com S D G Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage 150 ––– ––– V ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.15 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 35 44 m Ω VGS(th) Gate Threshold Voltage 2.5 ––– 4.5 V IDSS Drain-to-Source Leakage Current ––– ––– 1.0 µA ––– ––– 250 IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA Gate-to-Source Reverse Leakage ––– ––– -100 Dynamic @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units gfs Forward Transconductance 12 ––– ––– S Qg Total Gate Charge ––– 36 54 Qgs Gate-to-Source Charge ––– 7.5 ––– nC Qgd Gate-to-Drain ("Miller") Charge ––– 13 ––– td(on) Turn-On Delay Time ––– 15 ––– tr Rise Time –––13––– td(off) Turn-Off Delay Time ––– 36 ––– ns tf Fall Time –––14––– Ciss Input Capacitance ––– 1750 ––– Coss Output Capacitance ––– 220 ––– Crss Reverse Transfer Capacitance ––– 100 ––– pF Coss Output Capacitance ––– 870 ––– Coss Output Capacitance ––– 120 ––– Coss eff. Effective Output Capacitance ––– 170 ––– Avalanche Characteristics Parameter Units EAS Single Pulse Avalanche Energy d mJ IAR Avalanche Current à A Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 2.7 (Body Diode) A ISM Pulsed Source Current ––– ––– 42 (Body Diode) à VSD Diode Forward Voltage ––– ––– 1.3 V trr Reverse Recovery Time ––– 55 ––– ns Qrr Reverse Recovery Charge ––– 140 ––– nC ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) VGS = 20V VGS = -20V Max. VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz VGS = 0V, VDS = 120V, ƒ = 1.0MHz VGS = 0V, VDS = 0V to 120V g VGS = 10V f VDD = 100V ID = 3.1A RG = 6.5 Ω TJ = 25°C, IS = 3.1A, VGS = 0V f TJ = 25°C, IF = 3.1A, VDD = 25V di/dt = 100A/µs f Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 3.1A f VDS = VGS, ID = 250µA VDS = 120V, VGS = 0V VDS = 120V, VGS = 0V, TJ = 125°C MOSFET symbol showing the integral reverse p-n junction diode. Conditions VGS = 10V f VGS = 0V VDS = 25V ƒ = 1.0MHz 370 3.1 Typ. ––– ––– Conditions VDS = 50V, ID = 5.2A ID = 3.1A VDS = 75V 75V |
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