 |
поискавой системы для электроныых деталей |
|
|
поискавой системы для электроныых деталей |
|
TLE4961-5M датащи(PDF) 12 Page - Infineon Technologies AG |
|
|
|||||||||||||||||||||||||||||
TLE4961-5M датащи(HTML) 12 Page - Infineon Technologies AG |
|
|
12 / 26 page  TLE4961-5M Specification Data Sheet 12 Revision 1.0, 2013-07-04 3 Specification 3.1 Application Circuit The following Figure 3-1 shows the basic option of an application circuit. Only a pull-up resisotor RQ is necessary. An external series resistor for Vs is not needed. The resistor RQ has to be in a dimension to match the applied VS to keep IQ limited to the operating range of maximum 25 mA. e.g.: VS = 12 V and RQ=1200 Ω gives IQ= 12 V/1200 Ω = 10 mA. Figure 3-1 Basic Application Circuit #1: Only Pull-Up Resistor is necessary Figure 3-2 Enhanced Application Circuit #2: for extended ESD robustness With an additional capacitor CDD and a transient voltage suppression (TVS) diode an extended ESD robustness of 15kV on system level is achieved (Figure 3-2). If an increased robustness for e.g. testpulse 1 is required a serial resistor in the suppply needs to be added (see also Chapter 3.5). GND Vs RQ = 1.2kΩ VDD Q GND Vs RQ = 1.2kΩ CDD = 47nF VDD Q TVS diode e.g. ESD24VS2U |
|
|
ссылки URL |
| Вашему бизинису помогли Аллдатащит? [ DONATE ] |
Что такое Аллдатащит | реклама | контакт | Конфиденциальность | Ссылка на техническое описание | обмен ссыками | поиск по производителю All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Russian ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
