2003 Jun 23

2

Philips Semiconductors

Product specification

High-speed diode

BAS16L

FEATURES

• High switching speed: max. 4 ns

• Continuous reverse voltage: max. 75 V

• Repetitive peak reverse voltage: max. 100 V

• Repetitive peak forward current: max. 500 mA

• Leadless ultra small plastic package

(1 mm

× 0.6 mm × 0.5 mm)

• Power dissipation comparable to SOT23.

APPLICATIONS

• General purpose switching in surface mounted circuits

• Mobile communication, digital (still) cameras, PDA and

PCMCIA cards.

DESCRIPTION

The BAS16L is a high-speed switching diode fabricated in

planar technology and encapsulated in a SOD882

leadless ultra small plastic package.

handbook, halfpage

MAM471

Bottom view

Fig.1

Simplified outline (SOD882) and symbol.

Marking code: S2.

The marking bar indicates the cathode.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Note

1. Refer to SOD882 standard mounting conditions (footprint), FR4 printed-circuit board with 60

µm copper strip line.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

repetitive peak reverse voltage

−

100

V

continuous reverse voltage

−

75

V

continuous forward current

see Fig.2; note 1

−

215

mA

repetitive peak forward current

−

500

mA

non-repetitive peak forward current

to surge; see Fig.4

t=1

µs

−

4A

t=1ms

−

1A

t=1s

−

0.5

A

total power dissipation

−

250

mW

storage temperature

−65

+150

°C

junction temperature

−

150

°C