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PAM2800 датащи(PDF) 2 Page - Diodes Incorporated

номер детали PAM2800
подробное описание детали  HIGH POWER WHITE LED DRIVER
PDF  7 Pages
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производитель  DIODES [Diodes Incorporated]
домашняя страница  http://www.diodes.com
Logo DIODES - Diodes Incorporated

PAM2800 датащи(HTML) 2 Page - Diodes Incorporated

  PAM2800 Datasheet HTML 1Page - Diodes Incorporated PAM2800 Datasheet HTML 2Page - Diodes Incorporated PAM2800 Datasheet HTML 3Page - Diodes Incorporated PAM2800 Datasheet HTML 4Page - Diodes Incorporated PAM2800 Datasheet HTML 5Page - Diodes Incorporated PAM2800 Datasheet HTML 6Page - Diodes Incorporated PAM2800 Datasheet HTML 7Page - Diodes Incorporated  
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PAM2800
Document number: DSxxxxx Rev. 1 - 3
2 of 7
www.diodes.com
October 2012
© Diodes Incorporated
PAM2800
A Product Line of
Diodes Incorporated
Pin Description
Pin
Number
Pin
Name
Function
1
VIN
Input
2
GND
Ground
3
EN
Chip Enable (Active High)
4
FB
Feedback
5
VOUT
Output
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
These are stress ratings only and functional operation is not implied. Exposure to absolute maximum ratings for prolonged time periods may
affect device reliability. All voltages are with respect to ground.
Parameter
Rating
Unit
Input Voltage
6
V
Output Current
350
mA
Output Pin Voltage
GND -0.3 to VIN +0.3
V
Lead Soldering Temperature
300, (5sec)
°C
Storage Temperature
-65 to +150
°C
Recommended Operating Conditions (@TA = +25°C, unless otherwise specified.)
Parameter
Rating
Unit
Maximum Supply Voltage
5.5
V
Junction Temperature
-40 to +125
°C
Operation Temperature
-40 to +85
Thermal Information
Parameter
Symbol
Package
Max
Unit
Thermal Resistance (Junction to Case)
θJC
SOT23-5
130
°C/W
Thermal Resistance (Junction to Ambient)
θJA
SOT23-5
250
Internal Power Dissipation
PD
SOT23-5
400
mW
Electrical Characteristics (@TA = +25°C, VIN = 3.7V, CIN = 1µF, CO = 2.2µF, unless otherwise specified.)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Input Voltage
VIN
5.5
V
Output Current
IO
300
mA
Quiescent Current
IQ
No Load
65
90
µA
Efficiency
90
92
%
Over Temperature Shutdown
OTS
IO = 1mA
150
°C
Over Temperature Hysteresis
OTH
IO = 1mA
30
°C



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