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TLP722 датащи(PDF) 2 Page - Toshiba Semiconductor

номер детали TLP722
подробное описание детали  Photocoupler Photo-Diode
PDF  3 Pages
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производитель  TOSHIBA [Toshiba Semiconductor]
домашняя страница  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TLP722 датащи(HTML) 2 Page - Toshiba Semiconductor

  TLP722 Datasheet HTML 1Page - Toshiba Semiconductor TLP722 Datasheet HTML 2Page - Toshiba Semiconductor TLP722 Datasheet HTML 3Page - Toshiba Semiconductor  
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TLP722
2002-09-25
2
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Forward current
IF
25
mA
Forward current derating
∆IF / °C
-0.45
(Ta ≥ 70°C)
mA / °C
Pulse forward current
IFP
1
(1µs pulse, 1000 pps)
mA
Pulse forward current
IFTP
1
(100µs pulse, 1000 pps)
A
Reverse voltage
VR
5
V
Cathode
-anode voltage
VKAO
30
V
Anode
-cathode voltage
VAKO
0.5
V
Photodiode output current
IPB
100
µA
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
-55~125
°C
Operating temperature range
Topr
-55~100
°C
Lead soldering temperature (10 s)
Tsol
260 (10s)
°C
Isolation voltage
BVS
4000
(AC, 1min., R.H. 60%)
Vrms
Individual Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Forward voltage
VF
IF = 16 mA
―
1.65
1.85
V
Reverse current
IR
VR = 5 V
―
―
10
µA
Capacitance
CT
V = 0, f = 1 MHz
―
30
―
pF
Cathode
-anode
breakdown voltage
V(BR)KAO
IKA = 0.1 mA
30
―
―
V
Anode
-cathode
breakdown voltage
V(BR)AKO
IAK = 0.1 mA
0.5
―
―
V
VKA = 10 V
―
―
50
nA
Dark current
Ileak
VKA = 10 V, Ta = 85°C
―
―
1
µA
Photodaiode output
current
IPB
V = 10 mA, VKA = 5 V
10
―
50
µA
Capacitance
CAK
V = 0, f = 1 MHz
―
10
―
pF
Isolation Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Capacitance
(input to output)
CS
VS = 0, f = 1 MHz
―
0.8
―
pF
Isolation resistance
RS
VS = 500 V
1×10
12
10
14
―
Ω
AC, 1 minute
4000
―
―
AC, 1 second, in oil
―
10000
―
Vrms
Isolation voltage
BVS
DC, 1 minute, in oil
―
10000
―
Vdc



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