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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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DMC3028LSDX датащи(PDF) 2 Page - Diodes Incorporated |
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DMC3028LSDX датащи(HTML) 2 Page - Diodes Incorporated |
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2 / 9 page  DMC3028LSDX Document number: DS36210 Rev. 4 - 2 2 of 9 www.diodes.com November 2015 © Diodes Incorporated DMC3028LSDX Maximum Ratings – Q1 and Q2 (@T A = +25°C, unless otherwise specified.) Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Total Power Dissipation (Note 5) TA = +25°C PD 1.2 W TA = +70°C 0.75 Thermal Resistance, Junction to Ambient (Note 5) Steady state RθJA 108 °C/W t<10s 65 Total Power Dissipation (Note 6) TA = +25°C PD 1.5 W TA = +70°C 0.95 Thermal Resistance, Junction to Ambient (Note 6) Steady state RθJA 85 °C/W t<10s 50 Thermal Resistance, Junction to Case (Note 6) RθJC 14.5 Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics – Q1 (@T A = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BVDSS 30 V VGS = 0V, ID = 250µA Zero Gate Voltage Drain Current IDSS 1 µA VDS = 24V, VGS = 0V Gate-Source Leakage IGSS 100 nA VGS = 20V, VDS = 0V ON CHARACTERISTICS (Note 8) Gate Threshold Voltage VGS(th) 1 3 V VDS = VGS, ID = 250µA Static Drain-Source On-Resistance RDS (ON) 19 27 m Ω VGS = 10V, ID = 6A 22 35 VGS = 4.5V, ID = 5A Diode Forward Voltage VSD 0.7 1.2 V VGS = 0V, IS = 1.3A DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Ciss 641 pF VDS = 15V, VGS = 0V f = 1.0MHz Output Capacitance Coss 66 Reverse Transfer Capacitance Crss 51 Gate Resistance RG 2.2 VDS = 0V, VGS = 0V, f = 1.0MHz Total Gate Charge (VGS = 4.5V) Qg 6 nC VDS = 15V, ID = 10A Total Gate Charge (VGS = 10V) Qg 13.2 Gate-Source Charge Qgs 1.7 Gate-Drain Charge Qgd 2.2 Turn-On Delay Time tD(on) 3.3 nS VGS = 10V, VDD = 15V, RG = 6, ID = 1A Turn-On Rise Time tr 4.4 Turn-Off Delay Time tD(off) 22.3 Turn-Off Fall Time tf 5.3 Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. Characteristic Symbol Q1 Q2 Units Drain-Source Voltage VDSS 30 -30 V Gate-Source Voltage VGSS ±20 ±20 V Continuous Drain Current (Note 5) VGS =10V Steady State TA = +25°C TA = +70°C ID 5.5 4.1 -5.8 -4.3 A t<10s TA = +25°C TA = +70°C ID 7.2 5.7 -7.6 -6.1 A Maximum Body Diode Forward Current (Note 5) IS 2.2 -2.2 A Pulsed Drain Current (10µs pulse, duty cycle = 1%) IDM 40 -30 A Avalanche Current (Note 7) L = 0.1mH IAS 14.5 -22 A Avalanche Energy (Note 7) L = 0.1mH EAS 10.5 25 mJ |
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