SI5404DC datasheet(2/4 Pages) VISHAY

2 / 4 page

Si5404DC

Vishay Siliconix

www.vishay.com

Document Number: 71057

S-31989—Rev. C, 13-Oct-03

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 mA

0.6

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "12 V

"100

Zero Gate Voltage Drain Current

IDSS

VDS = 20 V, VGS = 0 V

Zero Gate Voltage Drain Current

IDSS

VDS = 20 V, VGS = 0 V, TJ = 85_C

On-State Drain Currenta

ID(on)

VDS w 5 V, VGS = 4.5 V

Drain-Source On-State Resistancea

rDS(on)

VGS = 4.5 V, ID = 5.2 A

0.025

0.030

Drain-Source On-State Resistancea

rDS(on)

VGS = 2.5 V, ID = 4.3 A

0.038

0.045

Forward Transconductancea

gfs

VDS = 10 V, ID = 5.2 A

Diode Forward Voltagea

VSD

IS = 1.1 A, VGS = 0 V

0.8

1.2

Dynamicb

Total Gate Charge

Gate-Source Charge

Qgs

VDS = 10 V, VGS = 4.5 V, ID = 5.2 A

2.4

Gate-Drain Charge

Qgd

3.2

Turn-On Delay Time

td(on)

Rise Time

VDD = 10 V, RL = 10 W

Turn-Off Delay Time

td(off)

VDD = 10 V, RL = 10 W

ID ^ 1 A, VGEN = 4.5 V, RG = 6 W

Fall Time

Source-Drain Reverse Recovery Time

trr

IF = 1.1 A, di/dt = 100 A/ms

Notes

Pulse test; pulse width v 300 ms, duty cycle v 2%.

Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

0.0

0.5

1.0

1.5

2.0

2.5

3.0

VGS = 5 thru 3 V

TC = 125_C

-55_C

2 V

25_C

Output Characteristics

Transfer Characteristics

VDS - Drain-to-Source Voltage (V)

VGS - Gate-to-Source Voltage (V)

1.5 V

2.5 V

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