2SC4115 datasheet(1/2 Pages) HOTTECH

номер детали	2SC4115

подробное описание детали	Plastic-Encapsulate Transistors

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производитель	HOTTECH [GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.]

домашняя страница	http://www.hottech.net.cn/

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Plastic-Encapsulate Transistors

GUANGDONG

HOTTECH

INDUSTRIAL

CO,. LTD.

FEATURES

• Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC / IB = 2A / 0.1A)

• Excellent current gain characteristics.

• Complements to 2SA1585

Maximum Ratings (Ta=25

unless otherwise noted)

Parameter

Symbol

Value

Unit

Collector-Base Voltage

VCBO

40

V

Collector-Emitter Voltage

VCEO

20

V

Emitter-Base Voltage

VEBO

6

V

Collector Current -Continuous

IC

3

A

Collector Power dissipation

PC

0.5

W

Junction Temperature

TJ

150

Storage Temperature

Tstg

-55to +150

ELECTRICAL CHARACTERISTICS ( @ Ta=25

unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

VCBO

IC= 50μA, IE=0

40

V

Collector-emitter breakdown voltage

VCEO

IC=1mA , IB=0

20

V

Emitter-base breakdown voltage

VEBO

IE=50μA, IC=0

6

V

Collector cut-off current

ICBO

VCB=30V, IE=0

0.1

μA

Emitter cut-off current

IEBO

VEB= 5V, IC=0

0.1

μA

DC current gain

hFE

VCE=2V, IC= 0.1A

120

560

Collector-emitter saturation voltage*

VCEsat

IC= 2A, IB=0.1A

0.5

V

Transition frequency

fT

VCE=2V, IC=0.5 A

F=100MHz

200

290

MHz

CLASSIFICATION OF hFE

Rank

Q

R

S

Range

120-270

180-390

270-560

Marking

4115Q

4115R

4115S

2SC4115 (NPN)

1. BASE

2. COLLECTO

SOT-89

3. EMITTER

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