2SC3650 datasheet(1/2 Pages) HOTTECH

номер детали	2SC3650

подробное описание детали	Plastic-Encapsulate Transistors

PDF	2 Pages

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производитель	HOTTECH [GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.]

домашняя страница	http://www.hottech.net.cn/

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Plastic-Encapsulate Transistors

GUANGDONG

HOTTECH

INDUSTRIAL

CO,. LTD.

FEATURES

• High DC current gain.

•Low collector-to-emitter saturation voltage.

•Large current capacity.

•Very small size making it easy to provide

high- Density,small-sized hybrid IC S

Marking: CF

Maximum Ratings (Ta=25

unless otherwise noted)

Parameter

Symbol

Value

Unit

Collector-Base Voltage

VCBO

30

V

Collector-Emitter Voltage

VCEO

25

V

Emitter-Base Voltage

VEBO

15

V

Collector Current -Continuous

IC

1.2

A

Collector Power dissipation

PC

0.5

W

Junction Temperature

TJ

150

Storage Temperature

Tstg

-55to +150

ELECTRICAL CHARACTERISTICS ( @ Ta=25

unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

Collector-base

breakdown

voltage

VCBO

IC=10uA,IE=0

30

V

Collector-emitter

breakdown

voltage

VCEO

IC=1mA,IB=0

25

V

Emitter-base

breakdown

voltage

VEBO

IE=10uA,IC=0

15

V

Collector

cut-off

current

ICBO

VCB=20V,IE=0

0.1

μA

Emitter

cut-off

current

IEBO

VEB=10V,IC=0

0.1

μA

DC current

gain

hFE

VCE=5V,IC=500mA

800

1500

3200

Collector-emitter

saturation

voltage

VCE(sat)

IC=0.5A,

IB=0.01A

0.12

0.5

V

Base-emitter

saturation

voltage

VBE(sat)

IC=0.5A,

IB=0.01A

0.85

1.2

V

Transition

frequency

fT

VCE=10V,Ic=50mA

220

MHz

Collector

output

capacitance

Cob

VCB=10V,IE=0,f=1MHz

17

pF

2SC3650 (NPN)

1. BASE

2. COLLECTO

SOT-89

3. EMITTER

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