2SC1766 datasheet(1/2 Pages) HOTTECH

номер детали	2SC1766

подробное описание детали	Plastic-Encapsulate Transistors

PDF	2 Pages

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производитель	HOTTECH [GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.]

домашняя страница	http://www.hottech.net.cn/

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Plastic-Encapsulate Transistors

GUANGDONG

HOTTECH

INDUSTRIAL

CO,. LTD.

FEATURES

• Small flat package.

• Low saturation voltage VCE(sat)=-0.5V

• High speed switching time

• PC=1.0 to 2.0W

z

High saturation current capability

Maximum Ratings (Ta=25

unless otherwise noted)

Parameter

Symbol

Value

Unit

Collector-Base Voltage

VCBO

50

V

Collector-Emitter Voltage

VCEO

50

V

Emitter-Base Voltage

VEBO

5

V

Collector Current -Continuous

IC

2

A

Peak Base Current

IBM

0.4

A

Collector Power dissipation

PC

1

W

Storage Temperature

Tstg

-55to +150

ELECTRICAL CHARACTERISTICS ( @ Ta=25

unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

Collector

cut-off

current

ICBO

VCB=50V,IE=0

0.1

μA

Emitter

cut-off

current

IEBO

VEB=5V,IC=0

0.1

μA

DC current

gain

hFE

VCE=2V,IC=500mA

70

240

Collector-emitter

saturation

voltage

VCE(sat)

IC=1A,

IB=50mA

0.5

V

Base-emitter

saturation

voltage

VBE(sat)

IC=1A,

IB=50mA

1.2

mV

Transition

frequency

fT

VCE=2V,Ic=0.5A

f=100MHz

120

MHz

Collector

output

capacitance

Cob

VCB=10V,IE=0,f=1MHz

40

pF

CLASSIFICATION

OF

hFE

Rank

P

Q

Y

Range

82-180

120-270

180-390

Marking

P1766

Q1766

Y1766

2SC1766 (NPN)

1. BASE

2. COLLECTO

SOT-89

3. EMITTER

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