RN1501

~RN1506

2001-06-07

1

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1501,RN1502,RN1503

RN1504,RN1505,RN1506

Switching, Inverter Circuit, Interface Circuit

And Driver Circuit Applications

l Including two devices in SMV

(super mini type with 5 leads)With built-in bias resistors

l Simplify circuit design

l Reduce a quantity of parts and manufacturing process

l Complementary to RN2501~RN2506

Equivalent Circuit and Bias Resister Values

Type No.

R1 (kΩ)

R2 (kΩ)

RN1501

4.7

4.7

RN1502

10

10

RN1503

22

22

RN1504

47

47

RN1505

2.2

47

RN1506

4.7

47

°°°°C) (Q1, Q2 Common)

Characteristic

Symbol

Rating

Unit

Collector-base voltage

50

V

Collector-emitter voltage

RN1501~1506

50

V

RN1501~1504

10

Emitter-base voltage

RN1505, 1506

5

V

Collector current

100

mA

Collector power dissipation

300

mW

Junction temperature

150

°C

Storage temperature range

RN1501~1506

−55~150

°C

* Total rating

JEDEC

―

EIAJ

―

TOSHIBA

2-3L1A

Weight: 6.8mg

Unit: mm