4-631
Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching® Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
InGaP/HBT
GaN HEMT
SiGe Bi-CMOS
V_BIAS
VREF
VCC1
RF IN
RF OUT/VCC2
RF OUT/VCC2
RF OUT/VCC2
RF OUT/VCC2
1
2
3
4
8
7
6
5
PACKAGE BASE
GND
Bias
Circuit
RF3802
GaAs HBT PRE-DRIVER AMPLIFIER
• GaAs HBT Pre-Driver for Basestation Amplifiers
• Power Amplifier Stage for Commercial Wireless
Infrastructure
• Class AB Operation for GSM/EDGE/CDMA
Transmitter Applications
The RF3802 is specifically designed for wireless infra-
structure applications. Using a highly reliable GaAs HBT
fabrication process, this high-performance dual-stage
amplifier achieves high output power over a broad fre-
quency range. The RF3802 amplifier also provides excel-
lent efficiency and thermal stability through the use of a
thermally-enhanced surface-mount AlN package. Ease of
integration is accomplished through the incorporation of
an optimized evaluation board design provided to achieve
proper 50
Ω operation. Various evaluation board bias con-
figurations are available to address a broad range of wire-
less infrastructure applications:
•
AMPS/GSM850/EDGE850
•
GSM900/EDGE900
•
IS-95/CDMA2000/AMPS
• 5W Output Power
• High Linearity
• 35% Power-Added Efficiency
• AlN Packaging
• Broadband Platform Design Approach
RF3802
GaAs HBT Pre-Driver Amplifier
RF3802PCBA-410 Fully Assembled Evaluation Board - GSM850
RF3802PCBA-411 Fully Assembled Evaluation Board - GSM900
0
Rev A1 040927
0.005 A
0.0025
-A-
0.024
0.156
0.025
R.008
0.028
TYP
0.020
7 PL
0.050
TYP
0.050
REF
0.0780
MAX
Dimensions in inches.
0.180
REF
0.198
0.200 REF
0.236
Shaded circle designates
pin 1 location.
Pin 1
Package Style: AlN
Proposed
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