4-1
Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching® Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
InGaP/HBT
GaN HEMT
SiGe Bi-CMOS
2
GND1
3
BIAS
4RF OUT
1
RF IN
GND2
5
RF2373
3V LOW NOISE AMPLIFIER/
3V DRIVER AMPLIFIER
• WLAN LNA/Driver
• GPS LNA
• CDMA PCS LNA
• Low Noise Transmit Power Amplifier
• General Purpose Amplification
• Driver Amplifier for TX Power Amplifier
The RF2373 is a low noise amplifier with a very high
dynamic range designed for WLAN and digital cellular
applications. The device functions as an outstanding front
end low noise amplifier or driver amplifier in the transmit
chain of digital subscriber units where low transmit noise
power is a concern. When used as an LNA, the bias cur-
rent can be set externally. When used as a PA driver, the
IC can operate directly from a single cell Li-ion battery
and includes a power down feature that can be used to
completely turn off the device. The IC is featured in a
standard SOT 5-lead plastic package.
• Low Noise and High Intercept Point
• Adjustable Bias Current
• Power Down Control
• Single 1.8V to 6.0V Power Supply
• 400MHz to 3GHz Operation
• Extremely Small SOT 5-Lead Package
RF2373
3V Low Noise Amplifier/ 3V Driver Amplifier
RF2373PCK-414 Fully Assembled Evaluation Board with 5 Sample
Parts
0
Rev A1 040921
1
1.60
+ 0.01
0.400
2.80
+ 0.20
2.90
+ 0.10
0.45
+ 0.10
3° MAX
0° MIN
0.127
0.15
0.05
1.44
1.04
Dimensions in mm.
0.950
Package Style: SOT 5-Lead
Preliminary
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