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NTD2955 датащи(PDF) 2 Page - ON Semiconductor

номер детали NTD2955
подробное описание детали  Power MOSFET
PDF  8 Pages
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производитель  ONSEMI [ON Semiconductor]
домашняя страница  http://www.onsemi.com
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NTD2955 датащи(HTML) 2 Page - ON Semiconductor

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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 3)
(VGS = 0 Vdc, ID = −0.25 mA)
(Positive Temperature Coefficient)
V(BR)DSS
−60
−
−
67
−
−
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VGS = 0 Vdc, VDS = −60 Vdc, TJ = 25°C)
(VGS = 0 Vdc, VDS = −60 Vdc, TJ = 150°C)
IDSS
−
−
−
−
−10
−100
mAdc
Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
IGSS
−
−
−100
nAdc
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
(VDS = VGS, ID = −250 mAdc)
(Negative Temperature Coefficient)
VGS(th)
−2.0
−
−2.8
4.5
−4.0
−
Vdc
mV/
°C
Static Drain−Source On−State Resistance
(VGS = −10 Vdc, ID = −6.0 Adc)
RDS(on)
−
0.155
0.180
W
Drain−to−Source On−Voltage
(VGS = −10 Vdc, ID = −12 Adc)
(VGS = −10 Vdc, ID = −6.0 Adc, TJ = 150°C)
VDS(on)
−1.86
−
−2.6
−2.0
Vdc
Forward Transconductance (VDS = 10 Vdc, ID = 6.0 Adc)
gFS
8.0
−
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
Ciss
−
500
750
pF
Output Capacitance
(VDS = −25 Vdc, VGS = 0 Vdc,
F = 1.0 MHz)
Coss
−
150
250
Reverse Transfer Capacitance
F = 1.0 MHz)
Crss
−
50
100
SWITCHING CHARACTERISTICS (Notes 3 and 4)
Turn−On Delay Time
td(on)
−
10
20
ns
Rise Time
(VDD = −30 Vdc, ID = −12 A,
tr
−
45
85
Turn−Off Delay Time
(VDD = −30 Vdc, ID = −12 A,
VGS = −10 V, RG = 9.1 W)
td(off)
−
26
40
Fall Time
tf
−
48
90
Gate Charge
QT
−
15
30
nC
(VDS = −48 Vdc, VGS = −10 Vdc,
ID = −12 A)
QGS
−
4.0
−
ID = −12 A)
QGD
−
7.0
−
DRAIN−SOURCE DIODE CHARACTERISTICS (Note 3)
Diode Forward On−Voltage
(IS = 12 Adc, VGS = 0 V)
(IS = 12 Adc, VGS = 0 V, TJ = 150°C)
VSD
−
−
−1.6
−1.3
−2.5
−
Vdc
Reverse Recovery Time
(I
12 A dI /dt
100 A/
V
0V)
trr
−
50
ns
(IS = 12 A, dIS/dt = 100 A/ms ,VGS = 0 V)
ta
−
40
−
tb
−
10
−
Reverse Recovery Stored Charge
QRR
−
0.10
−
mC
3. Indicates Pulse Test: Pulse Width
≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperature.



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