IRLML5103 datasheet(2/4 Pages) HOTTECH

2 / 4 page

Parameter

Min. Typ. Max. Units

Conditions

Continuous Source Current

MOSFET symbol

(Body Diode)

showing the

ISM

Pulsed Source Current

integral reverse

(Body Diode)

p-n junction diode.

VSD

Diode Forward Voltage

-1.2

TJ = 25°C, IS = -0.60A, VGS = 0V

trr

Reverse Recovery Time

TJ = 25°C, IF = -0.60A

Qrr

Reverse RecoveryCharge

di/dt = 100A/µs

Source-Drain Ratings and Characteristics

-0.54

-4.8

Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

ISD ≤ -0.60A, di/dt ≤ 110A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 150°C

Notes:

Pulse width ≤ 300µs; duty cycle ≤ 2%.

Surface mounted on FR-4 board, t ≤ 5sec.

Fig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

Fig 2. Typical Output Characteristics

Fig 4. Normalized On-Resistance

Vs. Temperature

0.1

-V

, Drain-to-Source Voltage (V)

-3.0V

VGS

TOP

- 15V

- 10V

- 7.0V

- 5.5V

- 4.5V

- 4.0V

- 3.5V

BOTTOM - 3.0V

20µs PULSE WIDTH

T = 150°C

0.1

3.0

4.0

5.0

6.0

7.0

8.0

T = 25°C

T = 150°C

-V

, Gate-to-Source Voltage (V)

= -10V

20µs PULSE WIDTH

0.0

0.5

1.0

1.5

2.0

-60 -40 -20

100 120 140 160

T , Junction Temperature (°C)

= -10V

I = -0.60A

0.1

20µs PULSE WIDTH

T = 25°C

-V

, Drain-to-Source Voltage (V)

-3.0V

VGS

TOP

- 15V

- 10V

- 7.0V

- 5.5V

- 4.5V

- 4.0V

- 3.5V

BOTTOM - 3.0V

Page:P4 -P2

Plastic-Encapsulate Mosfets

GUANGDONG

HOTTECH

INDUSTRIAL

CO., LTD.

IRLML5103

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