2SA1261-Z datasheet(1/2 Pages) ISC

номер детали	2SA1261-Z

подробное описание детали	isc Silicon PNP Power Transistor

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производитель	ISC [Inchange Semiconductor Company Limited]

домашняя страница	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc website：www.iscsemi.com

isc & iscsemi is registered trademark

1

isc Silicon PNP Power Transistor

2SA1261-Z

DESCRIPTION

·

High switching speed

·

Low Collector-Emitter Saturation Voltage-

: VCE(sat)= -0.6V(Max)@ IC= -5A

·

100% avalanche tested

·

Minimum Lot-to-Lot variations for robust device

performance and reliable operation

·

Complementary to 2SC3157

APPLICATIONS

·

High speed high voltage switching industrial use

·

DC/DC converters

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNI

T

VCBO

Collector-Base Voltage

-100

V

VCEO

Collector-Emitter Voltage

-100

V

VEBO

Emitter-Base Voltage

-7

V

IC

Collector Current-Continuous

-10

A

ICM

Collector Current-Peak

-20

A

IB

Base Current-Continuous

-3.5

A

PC

Total Power Dissipation

@ TC=25℃

20

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

Аналогичный номер детали - 2SA1261-Z

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Аналогичный номер детали - 2SA1261-Z

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