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MIC2199BML датащи(PDF) 14 Page - Micrel Semiconductor |
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MIC2199BML датащи(HTML) 14 Page - Micrel Semiconductor |
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14 / 15 page ![]() MIC2199 Micrel MIC2199 14 November 2004 Decoupling Capacitor Selection The 4.7µF decoupling capacitor is used to minimize noise on the V DD pin. The placement of this capacitor is critical to the proper operation of the IC. It must be placed right next to the pins and routed with a wide trace. The capacitor should be a good quality tantalum. An additional 1µF ceramic capacitor may be necessary when driving large MOSFETs with high gate capacitance. Incorrect placement of the V DD decoupling capacitor will cause jitter or oscillations in the switching waveform and large variations in the overcurrent limit. A 0.1µF ceramic capacitor is required to decouple the VIN. The capacitor should be placed near the IC and connected directly to between pin 6 (V IN) and pin 9 (GND). PCB Layout and Checklist PCB layout is critical to achieve reliable, stable and efficient performance. A ground plane is required to control EMI and minimize the inductance in power, signal and return paths. The following guidelines should be followed to insure proper operation of the circuit. • Signal and power grounds should be kept separate and connected at only one location. Large currents or high di/dt signals that occur when the MOSFETs turn on and off must be kept away from the small signal connections. • The connection between the current-sense resis- tor and the MIC2199 current-sense inputs (pin 4 and 5) should have separate traces, through a 10Ω resistor on each pin. The traces should be routed as closely as possible to each other and their length should be minimized. Avoid running the traces under the inductor and other switching components. The 10Ω resistor should be placed close as possible to pins 4 and 5 on the MIC2199 and a 1nF to 0.1µF capacitor placed between pins 4 and 5 will help attenuate switching noise on the current sense traces. This capacitor should be placed close to pins 4 and 5. • When the high-side MOSFET is switched on, the critical flow of current is from the input capacitor through the MOSFET, inductor, sense resistor, output capacitor, and back to the input capacitor. These paths must be made with short, wide pieces of trace. It is good practice to locate the ground terminals of the input and output capacitors close to each. • When the low-side MOSFET is switched on, cur- rent flows through the inductor, sense resistor, output capacitor, and MOSFET. The source of the low-side MOSFET should be located close to the output capacitor. • The freewheeling diode, D1 in Figure 2, conducts current during the dead time, when both MOSFETs are off. The anode of the diode should be located close to the output capacitor ground terminal and the cathode should be located close to the input side of the inductor. • The 4.7µF capacitor, which connects to the VDD terminal (pin 7) must be located right at the IC. The V DD terminal is very noise sensitive and placement of this capacitor is very critical. Connections must be made with wide trace. The capacitor may be located on the bottom layer of the board and connected to the IC with multiple vias. • The V IN bypass capacitor should be located close to the IC and connected between pins 6 and 9. Connections should be made with a ground and power plane or with short, wide trace. |
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