2SB821 datasheet(1/2 Pages) ISC

номер детали	2SB821

подробное описание детали	isc Silicon PNP Power Transistor

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производитель	ISC [Inchange Semiconductor Company Limited]

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INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.com

isc & iscsemi is registered trademark

1

isc Silicon PNP Power Transistor

2SB821

DESCRIPTION

·

High Collector-Emitter Breakdown Voltage-

: V(BR)CEO= -40V(Min)

·

Good Linearity of hFE

·

Low Saturation Voltage

APPLICATIONS

·

Designed for use in audio amplifier, voltage regulator,

DC-DC converter and relay driver.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-50

V

VCEO

Collector-Emitter Voltage

-40

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-300

mA

PC

Collector Power Dissipation

@ TC=25℃

250

mW

TJ

Junction Temperature

125

℃

Tstg

Storage Temperature Range

-55~125

℃

Аналогичный номер детали - 2SB821

производитель	номер детали	датащи	подробное описание детали
Rohm	2SB822	538Kb / 11P	MEDIUM POWER TRANSISTOR(-32V, -2A)
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	2SB822P	538Kb / 11P	MEDIUM POWER TRANSISTOR(-32V, -2A)
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