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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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2SA1259 датащи(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SA1259 датащи(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon PNP Darlington Power Transistor 2SA1259 DESCRIPTION · High DC Current Gain- : hFE = 2000(Min)@ IC= -2.5A · Low Collector-Emitter Saturation Voltage : VCE(sat) = -1.5V(Max)@ IC= -2.5A · Complement to Type 2SC3145 APPLICATIONS · Designed for general purpose amplifier high fT and high speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -5 A ICM Collector Current-Peak -8 A PC Collector Power Dissipation TC=25℃ 30 W Collector Power Dissipation Ta=125℃ 1.75 Tj Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
Аналогичный номер детали - 2SA1259 |
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Аналогичное описание - 2SA1259 |
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ссылки URL |
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