2N6421 datasheet(1/2 Pages) ISC

номер детали	2N6421

подробное описание детали	isc Silicon PNP Power Transistor

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производитель	ISC [Inchange Semiconductor Company Limited]

домашняя страница	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.com

isc & iscsemi is registered trademark

1

isc Silicon PNP Power Transistor

2N6421

DESCRIPTION

·

Contunuous Collector Current-IC= -2A

·

Power Dissipation-PC= 35W @TC= 25℃

·

Collector-Emitter Saturation Voltage-

: VCE(sat)= -0.75 V(Max)@ IC = -1A

APPLICATIONS

·

Designed for high-speed switching and linear amplifier appli-

cation for high-voltage operational amplifiers, switching regu-

lators, converters,deflection stages and high fidelity amplifiers.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

5.0

℃

/W

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-375

V

VCEO

Collector-Emitter Voltage

-250

V

VEBO

Emitter-Base Voltage

-6

V

IC

Collector Current-Continuous

-2.0

A

ICM

Collector Current-Peak

-5.0

A

IB

Base Current

-1.0

A

PC

Collector Power Dissipation@TC=25℃

35

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-65~150

℃

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