SSF1007

100V N-Channel MOSFET

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Page 2 of 5

Rev.1.0

Symbol

Parameter

Min.

Typ.

Max

Units

Conditions

BVDSS

Drain-to-Source breakdown

voltage

100

—

—

V

VGS = 0V,

ID = 250μA

RDS(on)

Static Drain-to-Source

on-resistance

—

5

6

mΩ

VGS = 10V,

ID = 75A③

VGS(th)

Gate threshold voltage

2

—

4

V

VDS = VGS,

ID = 250μA

—

—

20

VDS = 100V,

VGS = 0V

IDSS

Drain-to-Source leakage current

—

—

250

μA

VDS = 80V,

VGS = 0V,

TJ = 125°C

Gate-to-Source forward leakage

—

—

100

VGS = 20V

IGSS

Gate-to-Source reverse leakage

—

—

-100

nA

VGS = -20V

Qg

Total gate charge

—

243

170

Qgs

Gate-to-Source charge

—

47

—

Qgd

Gate-to-Drain("Miller") charge

—

92

—

nC

ID = 75A

VDS = 50V

VGS = 10V③

td(on)

Turn-on delay time

—

28

—

tr

Rise time

—

108

—

td(off)

Turn-Off delay time

—

123

—

tf

Fall time

—

120

—

ns

VDD = 65V

ID = 75A

RG = 2.7 Ω

VGS = 10V③

Ciss

Input capacitance

—

8456

—

Coss

Output capacitance

—

454

—

Crss

Reverse transfer capacitance

—

417

—

pF

VGS = 0V

VDS = 50V

ƒ = 500KHz

Source-Drain Ratings and Characteristics

Parameter

Min.

Typ.

Max

Units

Conditions

IS

Continuous Source

Current (Body Diode)

—

—

130

MOSFET symbol

showing the

integral reverse

p-n junction diode.

ISM

Pulsed Source Current

(Body Diode) ①

—

—

520

A

TJ = 25°C, IS = 75A, VGS = 0V③

VSD

Diode Forward Voltage

—

1.3

V

TJ = 25°C, IF = 75A, VDD = 20V

di/dt = 100A/μs③

trr

Reverse Recovery

Time

—

57

70

ns

Qrr

Reverse Recovery

Charge

—

156

170

nC

TJ = 25°C, IF = 75A,Vgs=0V

di/dt = 100A/μs③

ton

Forward Turn-on Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)