U430 datasheet(2/6 Pages) VISHAY

2 / 6 page

U430/431

Vishay Siliconix

www.vishay.com

8-2

Document Number: 70249

S-04031—Rev. E, 04-Jun-01

SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)

Limits

U430

U431

Parameter

Symbol

Test Conditions

Typb

Min

Max

Min

Max

Unit

Static

Gate-Source

Breakdown Voltage

V(BR)GSS

IG = –1 mA, VDS = 0 V

–35

–25

Gate-Source Cutoff Voltage

VGS(off)

VDS = 10 V, ID = 1 nA

–1

–4

–2

–6

Saturation Drain Currentb

IDSS

VDS = 10 V, VGS = 0 V

VGS = –15 V, VDS = 0 V

–5

–150

Gate Reverse Current

IGSS

TA = 150_C

–10

–150

VDG = 10 V, ID = 5 mA

–15

Gate Operating Current

TA = 150_C

–10

Gate-Source Forward Voltage

VGS(F)

IG = 10 mA , VDS = 0 V

0.8

Dynamic

Common-Source

Forward Transconductanceb

gfs

Common-Source

Output Conductanceb

gos

VDS = 10 V, ID = 10 mA , f = 1 kHz

100

250

Common-Source

Input Capacitance

Ciss

4.5

Common-Source

Reverse Transfer Capacitance

Crss

VGS = –10 V, VDS = 0 V, f = 1 MHz

2.5

Equivalent Input Noise Voltage

VDS = 10 V, ID = 10 mA

f = 100 Hz

⁄

√Hz

High Frequency

Common-Source

Forward Transconductance

gfs

Common-Source

Output Conductance

gos

VDS = 10 V, ID = 10 mA

f = 100 MHz

0.13

Power-Match

Source Admittance

gig

Matching

Differential

Gate-Source Voltage

GS1–VGS2

VDG = 10 V, ID = 10 mA

Saturation Drain

Current Ratioc

DSS1

DSS2

VDS = 10 V, VGS = 0 V

0.95

0.9

Transconductance Ratioc

fs1

fs2

VDS = 10 V, ID = 10 mA, f = 1 kHz

0.95

0.9

Gate-Source

Cutoff Voltage Ratioc

GS(off)1

GS(off)2

VDS = 10 V, ID = 1 nA

0.95

0.9

Differential Gate Current

G1–IG2

VDG = 10 V, ID = 5 mA

–2

Common Mode Rejection Ratio

CMRR

VDG = 5 to 10 V, ID = 10 mA

Notes

Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.

NZBD

Pulse test: PW

v300 ms duty cycle v3%.

Assumes smaller value in the numerator.

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