S2KDF datasheet(2/5 Pages) DIODES

2 / 5 page

S2KDF

Document number: DS37227 Rev. 4 - 2

2 of 5

www.diodes.com

June 2016

S2KDF

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitance load, derate current by 20%.

Characteristic

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage (Note 5)

VRRM

VRWM

800

RMS Reverse Voltage

VR(RMS)

560

Average Rectified Output Current

@ TA = +25°C

2.0

Non-Repetitive Peak Forward Surge Current 8.3ms

Single Half Sine-Wave Superimposed on Rated Load

IFSM

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Typical Thermal Resistance, Junction to Terminal (Note 7)

RθJT

°C/W

Typical Thermal Resistance, Junction to Air (Note 7)

RθJA

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Reverse Breakdown Voltage (Note 5)

V(BR)R

800





IR = 10µA

Forward Voltage





0.90

0.78

0.95

0.84



1.0



1.1



IF = 1A, TJ = +25°C

IF = 1A, TJ = +125°C

IF = 2A, TJ = +25°C

IF = 2A, TJ = +125°C

Reverse Leakage Current (Note 5)





0.12

0.005



µA

VR = 800V, TJ = +25°C

VR = 800V, TJ = +125°C

Total Capacitance





VR = 4VDC, f = 1MHz

Notes:

5. Short duration pulse test used to minimize self-heating effect.

6. Device mounted on FR-4 substrate, 1" x 1", 2oz, single-sided, PC boards with 0.1" x 0.15" copper pads.

7. Device mounted on FR-4 substrate, 0.4" x 0.5", 2oz, single-sided, PC boards with 0.2" x 0.25" copper pads.

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