MSB10M datasheet(2/5 Pages) DIODES

2 / 5 page

MSB10M

Document number: DS37032 Rev. 3 - 2

2 of 5

www.diodes.com

April 2016

MSB10M

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

1,000

RMS Reverse Voltage

VR(RMS)

700

Average Rectified Output Current

@ TC = +120°C

1.0

Non-Repetitive Peak Forward Surge Current, 8.3ms

Single Half Sine-Wave Superimposed on Rated Load

IFSM

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Typical Thermal Resistance, Junction to Ambient (Note 5)

RθJA

°C/W

Typical Thermal Resistance, Junction to Case

RθJC

°C/W

Typical Thermal Resistance, Junction to Lead

RθJL

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Reverse Breakdown Voltage (Note 6)

V(BR)R

1,000

—

IR = 5μA

Forward Voltage

—

0.90

0.96

1.02

1.05

IF = 0.5A

IF = 1A

Leakage Current (Note 6)

—

500

μA

VR = 1,000V, TA = +25°C

VR = 1,000V, TA = +125°C

Total Capacitance

—

VR = 4V, f = 1.0MHz

Notes:

5. Device mounted on glass-epoxy substrate with 1 oz 20mm x 20mm Cu pad per pin.

6. Short duration pulse test used to minimize self-heating effect.

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