DPD13AWF datasheet(2/5 Pages) DIODES

2 / 5 page

DPD13AWF

Document number: DS38909 Rev. 1 - 2

2 of 5

www.diodes.com

June 2016

DPD13AWF

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Peak Pulse Power Dissipation (Note 5) 10/1000µs

(Note 6) 8/20µs

PPK

225

1125

Peak Forward Surge Current, 8.3ms Single Half Sine Wave

IFSM

Thermal Characteristics

Characteristic

Symbol

Value

Unit

DC Steady-State Power Dissipation (Note 8)

1.0

Thermal Resistance, Junction to Ambient (Note 8)

RθJA

330

°C/W

Thermal Resistance, Junction to Soldering Point (Note 9)

RθJS

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-65 to +150

C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Part Number

Reverse

Standoff

Voltage

Breakdown

Voltage

VBR @ IT (Note 10)

Test

Current

Max. Reverse

Leakage @ VRWM

Max. Clamping

Voltage @ IPP

Max. Peak

Pulse Current

(Note 5)

Marking

Code

VRWM (V)

Min (V)

Max (V)

IT (mA)

IR (A)

VC (V)

IPP (A)

DPD13AWF

14.4

15.9

1.0

21.5

10.5

TBG

Notes:

5. Non-Repetitive current pulse as shown in figure 2 and derated above TA = +25°C as per figure 2.

6. Non-Repetitive current pulse as shown in figure 3 and derated above TA = +25°C as per figure 3.

7. 1/2 sine wave (or eTuivalent sTuare wave), pulse width = 8.3ms, duty cycle = 4 pulses/minute maximum.

8. Device mounted on 1"x1", FR-4 PCB; 2 oz. Cu pad layout. Cathode pad dimensions 5.5mm x 3.5mm. Anode pad dimensions 2.25mm x 3.5mm.

9. Theoretical RJS calculated from the top center of the die straight down to the PCB/cathode tab solder junction.

10. VBR measured at pulse test current IT with tp 5.0ms at TA = +25°C.

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