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DMTH10H015LPS датащи(PDF) 3 Page - Diodes Incorporated

номер детали DMTH10H015LPS
подробное описание детали  100V 175째C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI
PDF  7 Pages
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производитель  DIODES [Diodes Incorporated]
домашняя страница  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMTH10H015LPS датащи(HTML) 3 Page - Diodes Incorporated

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DMTH10H015LPS
Document number: DS38713 Rev. 2 - 2
3 of 7
www.diodes.com
June 2016
© Diodes Incorporated
DMTH10H015LPS
0
5
10
15
20
25
30
0
0.5
1
1.5
2
2.5
3
V
= 6.0V
GS
V
= 3.6V
GS
V
= 4.5V
GS
V
= 10V
GS
V
= 5.0V
GS
V
= 4.0V
GS
V
, DRAIN-SOURCE VOLTAGE (V)
DS
Figure 1 Typical Output Characteristic
0
5
10
15
20
25
30
1.5
2
2.5
3
3.5
4
4.5
V
= 5.0V
DS
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
V
, GATE-SOURCE VOLTAGE (V)
GS
Figure 2 Typical Transfer Characteristics
T = 175°C
A
4
8
12
16
20
24
0
5
10
15
20
25
30
V
= 4.5V
GS
V
= 10V
GS
I , DRAIN-SOURCE CURRENT (A)
D
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
0
10
20
30
40
50
0
4
8
12
16
20
I
= 20A
D
V
, GATE-SOURCE VOLTAGE (V)
GS
Figure 4 Typical Drain-Source On-Resistance
vs. Gate-Source Voltage
0.004
0.006
0.008
0.01
0.012
0.014
0.016
0.018
0.02
0.022
0.024
0.026
0
5
10
15
20
25
30
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V
= 10V
GS
I , DRAIN CURRENT (A)
D
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
T = 175°C
A
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
-50
-25
0
25
50
75 100 125 150 175
V
= 6.0V
GS
I = 20A
D
V
= 10V
GS
I
= 20A
D
T , JUNCTION TEMPERATURE ( C)
J
Figure 6 On-Resistance Variation with Temperature



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