DMNH6042SPD

Document number: DS37387 Rev. 3 - 2

4 of 7

www.diodes.com

June 2016

© Diodes Incorporated

DMNH6042SPD

10

100

1000

0

5

10 15 20 25 30 35 40 45 50 55 60

V

Figure 10 Typical Junction Capacitance

f = 1MHz

C

iss

C

oss

C

rss

0

2

4

6

8

10

0

2

4

6

8

10

Q

Figure 11 Gate Charge

V

V

, DRAIN-SOURCE VOLTAGE (V)

Figure 12 SOA, Safe Operation Area

DS

I

,

D

R

A

I

N

C

U

R

R

E

N

T

(

A

)

D

R

Limited

DS(ON)

0.01

0.1

1

10

100

0.1

1

10

100

T

= 150°C

T = 25°C

V

= 10V

Single Pulse

J(max)

A

GS

DUT on 1 * MRP Board

DC

P

= 10s

W

P

= 1s

W

P

= 100ms

W

P

= 10ms

W

P

= 1ms

W

P

= 100µs

W

V

, DRAIN-SOURCE VOLTAGE (V)

DS

Figure 9 Typical Drain-Source Leakage Current vs. Voltage

I

,

D

R

A

I

N

L

E

A

K

A

G

E

C

U

R

R

E

N

T

(

n

A

)

D

S

S

0.1

1

10

100

1000

10000

0

5

10 15 20 25 30 35 40 45 50 55 60

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

T = 175°C

A

V

, SOURCE-DRAIN VOLTAGE (V)

SD

Figure 8 Diode Forward Voltage vs. Current

I

,

S

O

U

R

C

E

C

U

R

R

E

N

T

(

A

)

S

T = 85°C

A

0

2

4

6

8

10

12

14

16

18

20

22

24

26

28

30

0

0.3

0.6

0.9

1.2

1.5

T = 150°C

A

T = 175°C

A

T = -55°C

A

T = 25°C

A

T = 85°C

A

T , JUNCTION TEMPERATURE ( C)

Figure 7 Gate Threshold Variation vs. Junction Temperature

J



V

,

G

A

T

E

T

H

R

E

S

H

O

L

D

V

O

L

T

A

G

E

(

V

)

G

S

(t

h

)

1

1.3

1.6

1.9

2.2

2.5

-50

-25

0

25

50

75

100 125 150 175

I = 1mA

D

I = 250µA

D