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LM5102MM датащи(PDF) 3 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
номер детали LM5102MM
подробное описание детали  High Voltage Half-Bridge Gate Driver with Programmable Delay
PDF  13 Pages
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производитель  NSC [National Semiconductor (TI)]
домашняя страница  http://www.national.com
Logo NSC - National Semiconductor (TI)

LM5102MM датащи(HTML) 3 Page - National Semiconductor (TI)

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Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
V
DD to VSS
–0.3V to +18V
V
HB to VHS
–0.3V to +18V
LI or HI Inputs to V
SS
–0.3V to V
DD + 0.3V
LO Output
–0.3V to V
DD + 0.3V
HO Output
V
HS – 0.3V to VHB + 0.3V
V
HS to VSS
−1V to +100V
V
HB to VSS
118V
RT1 & RT2 to V
SS
–0.3V to 5V
Junction Temperature
+150˚C
Storage Temperature Range
–55˚C to +150˚C
ESD Rating HBM
(Note 2)
2kV
Recommended Operating
Conditions
V
DD
+9V to +14V
HS
–1V to 100V
HB
V
HS +8VtoVHS + 14V
HS Slew Rate
<50V/ns
Junction Temperature
–40˚C to +125˚C
Electrical Characteristics Specifications in standard typeface are for T
J = +25˚C, and those in boldface
type apply over the full operating junction temperature range. Unless otherwise specified, V
DD =VHB = 12V, VSS =VHS =
0V, RT1 = RT2 = 100k
Ω. No Load on LO or HO.
Symbol
Parameter
Conditions
Min
Typ
Max
Units
SUPPLY CURRENTS
I
DD
V
DD Quiescent Current
LI = HI = 0V
0.4
0.6
mA
I
DDO
V
DD Operating Current
f = 500 kHz
1.5
3
mA
I
HB
Total HB Quiescent Current
LI = HI = 0V
0.06
0.2
mA
I
HBO
Total HB Operating Current
f = 500 kHz
1.3
3
mA
I
HBS
HB to V
SS Current, Quiescent
V
HS =VHB = 100V
0.05
10
µA
I
HBSO
HB to V
SS Current, Operating
f = 500 kHz
0.08
mA
INPUT PINS
V
IL
Low Level Input Voltage Threshold
0.8
1.8
V
V
IH
High Level Input Voltage Threshold
1.8
2.2
V
R
I
Input Pulldown Resistance
100
200
500
k
TIME DELAY CONTROLS
V
RT
Nominal Voltage at RT1, RT2
2.7
3
3.3
V
I
RT
RT Pin Current Limit
RT1 = RT2 = 0V
0.75
1.5
2.25
mA
V
th
Timer Termination Threshold
1.8
V
T
DL1,TDH1
Rising edge turn-on delay, RT = 10 k
75
105
150
ns
T
DL2,TDH2
Rising edge turn-on delay, RT = 100 k
530
630
750
ns
UNDER VOLTAGE PROTECTION
V
DDR
V
DD Rising Threshold
6.0
6.9
7.4
V
V
DDH
V
DD Threshold Hysteresis
0.5
V
V
HBR
HB Rising Threshold
5.7
6.6
7.1
V
V
HBH
HB Threshold Hysteresis
0.4
V
BOOT STRAP DIODE
V
DL
Low-Current Forward Voltage
I
VDD-HB = 100 µA
0.60
0.9
V
V
DH
High-Current Forward Voltage
I
VDD-HB = 100 mA
0.85
1.1
V
R
D
Dynamic Resistance
I
VDD-HB = 100 mA
0.8
1.5
LO GATE DRIVER
V
OLL
Low-Level Output Voltage
I
LO = 100 mA
0.25
0.4
V
V
OHL
High-Level Output Voltage
I
LO = –100 mA,
V
OHL =VDD –VLO
0.35
0.55
V
I
OHL
Peak Pullup Current
V
LO = 0V
1.6
A
I
OLL
Peak Pulldown Current
V
LO = 12V
1.8
A
HO GATE DRIVER
V
OLH
Low-Level Output Voltage
I
HO = 100 mA
0.25
0.4
V
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