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LM5102MM датащи(PDF) 3 Page - National Semiconductor (TI) |
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LM5102MM датащи(HTML) 3 Page - National Semiconductor (TI) |
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3 / 13 page ![]() Absolute Maximum Ratings (Note 1) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. V DD to VSS –0.3V to +18V V HB to VHS –0.3V to +18V LI or HI Inputs to V SS –0.3V to V DD + 0.3V LO Output –0.3V to V DD + 0.3V HO Output V HS – 0.3V to VHB + 0.3V V HS to VSS −1V to +100V V HB to VSS 118V RT1 & RT2 to V SS –0.3V to 5V Junction Temperature +150˚C Storage Temperature Range –55˚C to +150˚C ESD Rating HBM (Note 2) 2kV Recommended Operating Conditions V DD +9V to +14V HS –1V to 100V HB V HS +8VtoVHS + 14V HS Slew Rate <50V/ns Junction Temperature –40˚C to +125˚C Electrical Characteristics Specifications in standard typeface are for T J = +25˚C, and those in boldface type apply over the full operating junction temperature range. Unless otherwise specified, V DD =VHB = 12V, VSS =VHS = 0V, RT1 = RT2 = 100k Ω. No Load on LO or HO. Symbol Parameter Conditions Min Typ Max Units SUPPLY CURRENTS I DD V DD Quiescent Current LI = HI = 0V 0.4 0.6 mA I DDO V DD Operating Current f = 500 kHz 1.5 3 mA I HB Total HB Quiescent Current LI = HI = 0V 0.06 0.2 mA I HBO Total HB Operating Current f = 500 kHz 1.3 3 mA I HBS HB to V SS Current, Quiescent V HS =VHB = 100V 0.05 10 µA I HBSO HB to V SS Current, Operating f = 500 kHz 0.08 mA INPUT PINS V IL Low Level Input Voltage Threshold 0.8 1.8 V V IH High Level Input Voltage Threshold 1.8 2.2 V R I Input Pulldown Resistance 100 200 500 k Ω TIME DELAY CONTROLS V RT Nominal Voltage at RT1, RT2 2.7 3 3.3 V I RT RT Pin Current Limit RT1 = RT2 = 0V 0.75 1.5 2.25 mA V th Timer Termination Threshold 1.8 V T DL1,TDH1 Rising edge turn-on delay, RT = 10 k Ω 75 105 150 ns T DL2,TDH2 Rising edge turn-on delay, RT = 100 k Ω 530 630 750 ns UNDER VOLTAGE PROTECTION V DDR V DD Rising Threshold 6.0 6.9 7.4 V V DDH V DD Threshold Hysteresis 0.5 V V HBR HB Rising Threshold 5.7 6.6 7.1 V V HBH HB Threshold Hysteresis 0.4 V BOOT STRAP DIODE V DL Low-Current Forward Voltage I VDD-HB = 100 µA 0.60 0.9 V V DH High-Current Forward Voltage I VDD-HB = 100 mA 0.85 1.1 V R D Dynamic Resistance I VDD-HB = 100 mA 0.8 1.5 Ω LO GATE DRIVER V OLL Low-Level Output Voltage I LO = 100 mA 0.25 0.4 V V OHL High-Level Output Voltage I LO = –100 mA, V OHL =VDD –VLO 0.35 0.55 V I OHL Peak Pullup Current V LO = 0V 1.6 A I OLL Peak Pulldown Current V LO = 12V 1.8 A HO GATE DRIVER V OLH Low-Level Output Voltage I HO = 100 mA 0.25 0.4 V www.national.com 3 |
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