DB91021m-AAS/A4

PARAMETER

MIN TYP MAX UNITS

TEST CONDITION

Input

Forward Voltage (V

1.2

1.65

V

I

Reverse Current (I

10

µA

V

Output

Collector-emitter Breakdown (BV

70

V

I

( Note 2 )

Emitter-collector Breakdown (BV

6

V

I

Collector-emitter Dark Current (I

50

nA

V

Coupled

Current Transfer Ratio (CTR) (Note 2)

IS201, ISD201, ISQ201

75

%

10mA I

IS201, ISD201, ISQ201

10

%

1mA I

IS202, ISD202, ISQ202

125

250

%

10mA I

IS202, ISD202, ISQ202

30

%

1mA I

IS203, ISD203, ISQ203

225

450

%

10mA I

IS203, ISD203, ISQ203

50

%

1mA I

IS204, ISD204, ISQ204

200

400

%

10mA I

IS204, ISD204, ISQ204

100

%

1mA I

Collector-emitter Saturation Voltage V

CE(SAT)

0.2

0.4

V

10mA I

Input to Output Isolation Voltage V

ISO

5300

V

RMS

See note 1

7500

V

PK

See note 1

Input-output Isolation Resistance R

ISO

Ω

V

Output Turn on Time

t

ON

3.0

µs

I

Output Turn off Time

t

OFF

2.5

µs

V

Note 1

Measured with input leads shorted together and output leads shorted together.

Note 2

Special Selections are available on request. Please consult the factory.

12/3/03

ABSOLUTE MAXIMUM RATINGS

(25°C unless otherwise specified)

Storage Temperature

-40°C to + 125°C

Operating Temperature

-25°C to + 100°C

Lead Soldering Temperature

(1/16 inch (1.6mm) from case for 10 secs) 260°C

INPUT DIODE

Forward Current

50mA

Reverse Voltage

6V

Power Dissipation

70mW

OUTPUT TRANSISTOR

Collector-emitter Voltage BV

CEO

70V

Emitter-collector Voltage BV

ECO

6V

Power Dissipation

150mW

POWER DISSIPATION

Total Power Dissipation

170mW

(derate linearly 2.67mW/°C above 25°C)

ELECTRICAL CHARACTERISTICS ( T