1

10.2± 0.2

0.8± 0.1

5.0± 0.5

1.4± 0.2

4.5± 0.2

0.4± 0.1

PIN

1.3± 0.1

1

3

2

2

4

0.1± 0.1

FEATURES

MECHANICAL DATA

Position: Any

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25

am bient tem perature unless otherwise specified.

UNITS

Maximum recurrent peak reverse voltage

V

Maximum RMS Voltage

V

Maximum DC blocking voltage

V

A

Peak forw ard surge current 8.3ms single half

A

Maximum forw ard

(I

voltage

)

(Note 1)

)

)

Maximum reverse current

@T

at rated DC blocking voltage

@T

Maximum thermal resistance (Note 2)

K/W

Operating junction temperature range

Storage temperature range

2

. Thermal resistance f rom junction to case.

m A

30

35

40

45

50

60

80

100

8.0

150

30

35

40

45

50

60

80

100

VOLTAGE RANGE: 30 - 100 V

CURRENT: 8.0 A

Metal silicon junction, m ajority carrier conduction.

SCHOTTKY BARRIER RECTIFIERS

High current capacity, low forward voltage drop.

NOTE: 1. Pulse test:300μs pulse width,1% duty cy cle.

-

55 ---- + 150

-

55 ---- + 150

Term inals:Solderable per MIL-STD-750,

1 1

Method 2026

0.1

0.5

3.0

MBRB830---MBRB8100

MBRB MBRB MBRB MBRB MBRB MBRB MBRB MBRB

830

835

840

845

850

860

880

8100

The plastic material carries U/L recognition 94V-0

High surge capacity.

For use in low voltage, high frequency inverters, free

Polarity: As m arked

Weight: 0.087 ounces,2.2 gram

15

50

V

0.57

0.70

0.84

0.70

-

0.80

0.85

0.95

-

Single phase,half wave,60Hz,resistive or inductive load.For capactive load,derate current by 20%.

Dimensions in millimeters

21

25

28

32

35

42

56

70

Diode Semiconductor Korea

www.diode.kr