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DS90CF363AMTD датащи(PDF) 2 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
номер детали DS90CF363AMTD
подробное описание детали  3.3V Programmable LVDS Transmitter 18-Bit Flat Panel Display (FPD) Link-65 MHz, 3.3V LVDS Transmitter 18-Bit Flat Panel Display (FPD) Link-65 MHz
PDF  10 Pages
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производитель  NSC [National Semiconductor (TI)]
домашняя страница  http://www.national.com
Logo NSC - National Semiconductor (TI)

DS90CF363AMTD датащи(HTML) 2 Page - National Semiconductor (TI)

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Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage (V
CC)
−0.3V to +4V
CMOS/TTL Input Voltage
−0.3V to (V
CC + 0.3V)
LVDS Driver Output Voltage
−0.3V to (V
CC + 0.3V)
LVDS Output Short Circuit
Duration
Continuous
Junction Temperature
+150˚C
Storage Temperature
−65˚C to +150˚C
Lead Temperature
(Soldering, 4 sec)
+260˚C
Maximum Package Power Dissipation Capacity @ 25˚C
MTD48 (TSSOP) Package:
DS90C363A/DS90CF363A
1.98 W
Package Derating:
DS90C363A/DS90CF363A
16 mW/˚C above +25˚C
ESD Rating
(HBM, 1.5 k
Ω, 100 pF)
> 7kV
(EIAJ, 0
Ω, 200 pF)
> 500V
Recommended Operating
Conditions
Min
Nom
Max
Units
Supply Voltage (V
CC)
3.0
3.3
3.6
V
Operating Free Air
Temperature (T
A)
−10
+25
+70
˚C
Receiver Input Range
0
2.4
V
Supply Noise Voltage (V
CC)
100
mV
PP
TxCLKIN frequency
18
68
MHz
Electrical Characteristics
Over recommended operating supply and temperature ranges unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Units
CMOS/TTL DC SPECIFICATIONS
V
IH
High Level Input Voltage
2.0
V
CC
V
V
IL
Low Level Input Voltage
GND
0.8
V
V
CL
Input Clamp Voltage
I
CL = −18 mA
−0.79
−1.5
V
I
IN
Input Current
V
IN = 0.4V, 2.5V or VCC
+1.8
+10
µA
V
IN = GND
−10
0
µA
LVDS DC SPECIFICATIONS
V
OD
Differential Output Voltage
R
L = 100Ω
250
345
450
mV
∆V
OD
Change in V
OD between
complimentary output states
35
mV
V
OS
Offset Voltage (Note 4)
1.125
1.25
1.375
V
∆V
OS
Change in V
OS between
complimentary output states
35
mV
I
OS
Output Short Circuit Current
V
OUT = 0V, RL = 100Ω
−3.5
−5
mA
I
OZ
Output TRI-STATE® Current
Power Down = 0V,
V
OUT =0VorVCC
±1
±10
µA
TRANSMITTER SUPPLY CURRENT
ICCTW
Transmitter Supply Current
Worst Case
R
L = 100Ω,
C
L = 5 pF,
Worst Case Pattern
(Figures 1, 4)
f = 32.5 MHz
31
43
mA
f = 37.5 MHz
33
45
mA
f = 65 MHz
39
52
mA
ICCTG
Transmitter Supply Current
16 Grayscale
R
L = 100Ω,
C
L = 5 pF,
16 Grayscale Pattern
(Figures 2, 4)
f = 32.5 MHz
23
35
mA
f = 37.5 MHz
28
40
mA
f = 65 MHz
33
45
mA
ICCTZ
Transmitter Supply Current
Power Down
Power Down = Low
Driver Outputs in TRI-STATE® under
Power Down Mode
10
55
µA
Note 1: “Absolute Maximum Ratings” are those values beyond which the safety of the device cannot be guaranteed. They are not meant to imply that the device
should be operated at these limits. The tables of “Electrical Characteristics” specify conditions for device operation.
Note 2: Typical values are given for VCC = 3.3V and T A = +25C.
Note 3: Current into device pins is defined as positive. Current out of device pins is defined as negative. Voltages are referenced to ground unless otherwise speci-
fied (except VOD and ∆VOD ).
Note 4: VOS previously referred as VCM.
www.national.com
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